Due to limited short-wavelength infrared (SWIR) (1.1-2.5 µm) response of silicon (Si), germanium and indiumgallium-arsenide based photodetectors have dominated the commercial market of SWIR photodetectors for decades. However, they are often constrained by high-temperature processing, spectral range, flexible incompatibility, and cryogenic cooling accessories. Therefore, it is important to develop photodetectors that can be directly integrated with complementary-metal-oxide-semiconductor devices. In this work, we demonstrate a Si-based SWIR photodetector operating in the wavelength range from 800 to 1870 nm, with responsivity up to 0.6 A/W, and operation speed down to 15 μs. By taking advantage of the fast photo-carriers transfer between graphene (Gr) and Si-quantum-dots (QDs), along with SWIR tunable Schottky-barrier height of Gr-Si junction, a novel Schottky-PN cascade heterojunction based photodetector has been demonstrated. The hyper-borondoped SiQDs, interacting with the Gr-Si Schottky photodiode, effectively and fast harvest SWIR-excited charge-carriers. The cascade photodiode working at room temperature, with detectivity of 10 11 Jones and sensitivity of 10-13 W/Hz 0.5 , manifests a promising prospect of our Si-based SWIR photodetector.

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A graphene/Si heterojunction device has been realized to overcome many different requests necessary to make it a versatile, widely used and competitive detector. The obtained photodetectors, which operate at room temperature, are sensitive in the spectral region from ultraviolet (240 nm) to infrared (2000 nm) and they can be used in different configurations that allow a high responsivity up to 107 A W−1, a rise time of a few nanoseconds, an external quantum efficiency greater than 300%, and a linear response for different light sources. This is allowed by the high quality of the graphene deposited on a large area of 8 mm2, and by the interdigitated design of the contacts, both preserving the excellent properties of graphene when switching from nanoscale to macroscopic dimensions of commonly used devices.

We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 A W−1), fast time response (5 ns), high specific detectivity (1.6 × 1013 Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 A W−1 in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and “dissipation-less” remote sensor networks.

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Graphene oxide (GO) based heterojunction photodetector was fabricated using a simple drop casting method which was further heated in a furnace at 450 °C. The physical characterization of the fabricated photodetector revealed non-homogeneous GO layer and presence of D and G band of graphene respectively at 1357 and 1596 cm-1. The pho-toresponsivity and external quantum efficiency of the photodetector were evaluated and optimized using infrared (IR) illumination at a wavelength of 974 nm. Current–voltage (I– V) characteristics found to be sturdily dependent on the increased laser power as it showed threshold voltage (V th) at 0.855 V. High photoresponsivity 9.577 mAW-1 was detected for laser power at 2.405 mW at direct-current (DC) bias 13.358 V. Rise and fall time found to be varying with frequency modulated laser and the applied DC bias voltage across the photodetector. High frequency modulation and low DC bias voltage showed profound rise and fall time at 48 and 2210 ls respectively. The photodetector was highly sensitive to 974 nm IR illumination for modulated laser frequency ranging from 1000 to 5000 Hz. Besides that, the fabricated heterojunction photodetector able to function in good condition at low DC bias voltage.

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Heterojunction photodetector based on reduced graphene oxide (rGO) has been realized using a spin coating technique. The electrical and optical characterization of bare GO and thermally reduced GO thin films deposited on glass substrate has been carried out. Ultraviolet–visible–infrared transmittance measurements of the GO and rGO thin films revealed broad absorption range, while the absorbance analysis evaluates rGO band gap of about 2.8 eV. The effect of GO reduction process on the photoresponse capability is reported. The current–voltage characteristics and the responsivity of rGO/n-Si based device have been investigated using laser diode wavelengths from UV up to IR spectral range. An energy band diagram of the heterojunction has been proposed to explain the current versus voltage characteristics. The device demonstrates a photoresponse at a broad spectral range with a maximum responsivity and detectivity of 0.20 A/W and 7 × 1010 cmHz/W, respectively. Notably, the obtained resul...

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We report the high performances of Metal-Insulator-Semiconductor Photodetectors (MIS PD) made with crystalline Ge nanocrystals (Ge NCs) as the active absorbers embedded in a silicon dioxide matrix. The Ge NCs have been obtained by a combination of Ge deposition by Molecular Beam Epitaxy (MBE) on tunnel thermal silicon oxide and solid state dewetting processes. Ge NCs structure and morphology are characterized by High Resolution Transmission Electron Microscopy (HRTEM) and Scanning Electron Microscopy (SEM). The photocurrent generation is determined by I-V spectroscopy and Photocurrent spectroscopy. We evidence the role of high quality Ge NCs on photocurrent and explain the high sensitivity of MIS photodetector as a result of transport mechanisms via photoexcited Ge NCs.These results indicate that the crystalline Ge NCs obtained via solid state dewetting can be integrated with opto-electronics and photonics technologies to produce new high performance optoelectronic devices fully com...

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